Invention Grant
- Patent Title: Memory with regulated ground nodes
- Patent Title (中): 具有受调节接地节点的存储器
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Application No.: US12832320Application Date: 2010-07-08
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Publication No.: US08576611B2Publication Date: 2013-11-05
- Inventor: Kuoyuan (Peter) Hsu , Yukit Tang , Derek Tao , Young Seog Kim
- Applicant: Kuoyuan (Peter) Hsu , Yukit Tang , Derek Tao , Young Seog Kim
- Applicant Address: TW
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW
- Agency: Lowe Hauptman & Ham, LLP
- Main IPC: G11C11/00
- IPC: G11C11/00

Abstract:
Some embodiments regard a memory array comprising: a plurality of memory cells arranged in a plurality of rows and a plurality of columns; wherein a column of the plurality of columns includes a column ground node; at least two voltage sources configured to be selectively coupled to the column ground node; and a plurality of memory cells having a plurality of internal ground nodes electrically coupled together and to the column ground node.
Public/Granted literature
- US20120008376A1 MEMORY WITH REGULATED GROUND NODES Public/Granted day:2012-01-12
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