Invention Grant
US08576614B2 Tunnel transistor, logical gate including the transistor, static random-access memory using the logical gate and method for making such a tunnel transistor
有权
隧道晶体管，包括晶体管的逻辑门，使用逻辑门的静态随机存取存储器和用于制造这样的隧道晶体管的方法
- Patent Title: Tunnel transistor, logical gate including the transistor, static random-access memory using the logical gate and method for making such a tunnel transistor
- Patent Title (中): 隧道晶体管，包括晶体管的逻辑门，使用逻辑门的静态随机存取存储器和用于制造这样的隧道晶体管的方法
-
Application No.: US13587733Application Date: 2012-08-16
-
Publication No.: US08576614B2Publication Date: 2013-11-05
- Inventor: Marc Heyns , Cedric Huyghebaert , Anne S. Verhulst , Daniele Leonelli , Rita Rooyackers , Wim Dehaene
- Applicant: Marc Heyns , Cedric Huyghebaert , Anne S. Verhulst , Daniele Leonelli , Rita Rooyackers , Wim Dehaene
- Applicant Address: BE Leuven BE Leuven
- Assignee: IMEC,Katholieke Universiteit Leuven, K.U. Leuven R&D
- Current Assignee: IMEC,Katholieke Universiteit Leuven, K.U. Leuven R&D
- Current Assignee Address: BE Leuven BE Leuven
- Agency: Knobbe Martens Olson & Bear LLP
- Priority: EP11180814 20110909
- Main IPC: G11C11/00
- IPC: G11C11/00
Abstract:
A tunnel transistor is provided including a drain, a source and at least a first gate for controlling current between the drain and the source, wherein the first sides of respectively the first and the second gate dielectric material are positioned substantially along and substantially contact respectively the first and the second semiconductor part.
Public/Granted literature
Information query
