Invention Grant
- Patent Title: Phase change random access memory apparatus performing a firing operation
- Patent Title (中): 执行点火操作的相变随机存取存储装置
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Application No.: US13219629Application Date: 2011-08-27
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Publication No.: US08576619B2Publication Date: 2013-11-05
- Inventor: Jung Hyuk Yoon , Dong Keun Kim
- Applicant: Jung Hyuk Yoon , Dong Keun Kim
- Applicant Address: KR Gyeonggi-do
- Assignee: SK Hynix Inc.
- Current Assignee: SK Hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: William Park & Associates Patent Ltd.
- Priority: KR10-2011-0009086 20110128
- Main IPC: G11C11/00
- IPC: G11C11/00
Abstract:
A phase change random access memory (PCRAM) apparatus includes: a memory cell array including a plurality of phase change memory cells; and a firing control unit configured to provide a firing voltage for firing the plurality of phase change memory cells to a global bit line in response to an enable signal based on a test mode signal.
Public/Granted literature
- US20120195113A1 PHASE CHANGE RANDOM ACCESS MEMORY APPARATUS Public/Granted day:2012-08-02
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