Invention Grant
- Patent Title: Nonvolatile memory device and method of operating the same
- Patent Title (中): 非易失存储器件及其操作方法
-
Application No.: US12647576Application Date: 2009-12-28
-
Publication No.: US08576621B2Publication Date: 2013-11-05
- Inventor: Tai Kyu Kang
- Applicant: Tai Kyu Kang
- Applicant Address: KR Gyeonggi-do
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2009-0016319 20090226
- Main IPC: G11C11/34
- IPC: G11C11/34
Abstract:
A nonvolatile memory device includes a control unit configured to measure a threshold voltage distribution of each of selected pages between a start voltage and an end voltage by performing a read operation on each page in response to a command set for analyzing the threshold voltage distribution, to compare the measured threshold voltage distribution with a reference threshold voltage distribution, and to determine a read voltage having a least amount of errors upon the read operation being performed.
Public/Granted literature
- US20100214853A1 NONVOLATILE MEMORY DEVICE AND METHOD OF OPERATING THE SAME Public/Granted day:2010-08-26
Information query
