Invention Grant
- Patent Title: Non-volatile memory device and read method thereof
- Patent Title (中): 非易失性存储器件及其读取方法
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Application No.: US13221162Application Date: 2011-08-30
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Publication No.: US08576622B2Publication Date: 2013-11-05
- Inventor: Sangyong Yoon , Ki-tae Park , Hongrak Son
- Applicant: Sangyong Yoon , Ki-tae Park , Hongrak Son
- Applicant Address: KR Gyeonggi-Do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-Do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2010-0117940 20101125
- Main IPC: G11C16/04
- IPC: G11C16/04
Abstract:
In one embodiment, the method for reading memory cells in an array of non-volatile memory cells includes reading data from a memory cell using a set of hard decision voltages and at least a first set of soft decision voltages based on a single read command.
Public/Granted literature
- US20120134207A1 Non-Volatile Memory Device And Read Method Thereof Public/Granted day:2012-05-31
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