Invention Grant
US08576630B2 Non-volatile memory device with plural reference cells, and method of setting the reference cells
有权
具有多个参考单元的非易失性存储器件，以及设置参考单元的方法
- Patent Title: Non-volatile memory device with plural reference cells, and method of setting the reference cells
- Patent Title (中): 具有多个参考单元的非易失性存储器件，以及设置参考单元的方法
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Application No.: US13466872Application Date: 2012-05-08
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Publication No.: US08576630B2Publication Date: 2013-11-05
- Inventor: Xian Liu , Michael James Heinz , Eugene Jinglun Tam , Michael K. Doan , Alexander Kotov , Tho Ngoc Dang , Jack Edward Frayer , Jung Hee Yun , Thuan T. Vu
- Applicant: Xian Liu , Michael James Heinz , Eugene Jinglun Tam , Michael K. Doan , Alexander Kotov , Tho Ngoc Dang , Jack Edward Frayer , Jung Hee Yun , Thuan T. Vu
- Applicant Address: US CA San Jose
- Assignee: Silicon Storage Technology, Inc.
- Current Assignee: Silicon Storage Technology, Inc.
- Current Assignee Address: US CA San Jose
- Agency: DLA Piper LLP (US)
- Main IPC: G11C16/06
- IPC: G11C16/06
Abstract:
A non-volatile memory device has an array of non-volatile memory cells, a first plurality of non-volatile memory reference cells, with each reference cell capable of being programmed to a reference level different from the other reference cells; and a second plurality of comparators. Each of the comparators is connectable to one of the first plurality of non-volatile memory reference cells and to one of a third plurality of memory cells from among the array of non-volatile memory cells.
Public/Granted literature
- US20120257465A1 Non-volatile Memory Device With Plural Reference Cells, And Method Of Setting The Reference Cells Public/Granted day:2012-10-11
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