Invention Grant
US08576634B2 Semiconductor device comprising a memory cell group having a gate width larger than a second memory cell group
有权
半导体器件包括具有大于第二存储单元组的栅极宽度的存储单元组
- Patent Title: Semiconductor device comprising a memory cell group having a gate width larger than a second memory cell group
- Patent Title (中): 半导体器件包括具有大于第二存储单元组的栅极宽度的存储单元组
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Application No.: US12764090Application Date: 2010-04-20
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Publication No.: US08576634B2Publication Date: 2013-11-05
- Inventor: Fumitoshi Ito , Yoshiyuki Kawashima , Takeshi Sakai , Yasushi Ishii , Yasuhiro Kanamaru , Takashi Hashimoto , Makoto Mizuno , Kousuke Okuyama , Yukiko Manabe
- Applicant: Fumitoshi Ito , Yoshiyuki Kawashima , Takeshi Sakai , Yasushi Ishii , Yasuhiro Kanamaru , Takashi Hashimoto , Makoto Mizuno , Kousuke Okuyama , Yukiko Manabe
- Applicant Address: JP Kawasaki-shi
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kawasaki-shi
- Agency: Miles & Stockbridge P.C.
- Priority: JP2004-284123 20040929
- Main IPC: G11C11/34
- IPC: G11C11/34 ; H01L29/792
Abstract:
The degree of integration and the number of rewriting of a semiconductor device having a nonvolatile memory element are improved. A first MONOS nonvolatile-memory-element and a second MONOS nonvolatile-memory-element having a large gate width compared with the first MONOS nonvolatile-memory-element are mounted together on the same substrate, and the first MONOS nonvolatile-memory-element is used for storing program data which is scarcely rewritten, and the second MONOS nonvolatile-memory-element is used for storing processed data which is frequently rewritten.
Public/Granted literature
- US20100202205A1 SEMICONDUCTOR DEVICE Public/Granted day:2010-08-12
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