Invention Grant
US08576637B2 Memory module including memory buffer and memory system having the same
有权
内存模块包括内存缓冲区和具有相同内存的系统
- Patent Title: Memory module including memory buffer and memory system having the same
- Patent Title (中): 内存模块包括内存缓冲区和具有相同内存的系统
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Application No.: US12959504Application Date: 2010-12-03
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Publication No.: US08576637B2Publication Date: 2013-11-05
- Inventor: Soon-Deok Jang , Seok-Il Kim , Seung-Jin Seo , You-Keun Han
- Applicant: Soon-Deok Jang , Seok-Il Kim , Seung-Jin Seo , You-Keun Han
- Applicant Address: KR Yeongtong-gu, Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Yeongtong-gu, Suwon-si, Gyeonggi-do
- Agency: Muir Patent Consulting, PLLC
- Priority: KR10-2010-0003815 20100115
- Main IPC: G11C7/10
- IPC: G11C7/10

Abstract:
A memory buffer selecting between a parallel test mode and a mode register control mode, and a memory module and memory system having the memory buffer are disclosed. The memory buffer includes a control circuit and a mode selecting circuit. The control circuit generates a mode control signal based on a first chip selecting signal, a second chip selecting signal, a row address signal, a column address signal, and a write enable signal. The mode selecting circuit selects one of a parallel test mode and a mode register control mode in response to the mode control signal.
Public/Granted literature
- US20110176371A1 MEMORY MODULE INCLUDING MEMORY BUFFER AND MEMORY SYSTEM HAVING THE SAME Public/Granted day:2011-07-21
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