A memory device in which a circuit reads a cell condition. A terminal provides voltage to a bit line of the circuit via a switch. The circuit outputs and enables storage of a first logical value when the voltage provided from the terminal does not exceed a threshold value. The circuit outputs and enables storage of a second logical value when the voltage provided from the terminal exceeds the threshold value. The output and storage occurs in the absence of an electrical connection between the cell and circuit. The switch provides voltage supplied from the terminal to the bit line of the circuit. The voltage increases from a value which does not exceed the threshold to a value which exceeds the threshold.