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US08576645B2 Semiconductor memory device capable of minimizing current consumption during high speed operation 有权
半导体存储器件能够在高速运行期间最小化电流消耗

  • Patent Title: Semiconductor memory device capable of minimizing current consumption during high speed operation
  • Patent Title (中): 半导体存储器件能够在高速运行期间最小化电流消耗
  • Application No.: US13103409
    Application Date: 2011-05-09
  • Publication No.: US08576645B2
    Publication Date: 2013-11-05
  • Inventor: Tae-Kyun Kim
  • Applicant: Tae-Kyun Kim
  • Applicant Address: KR Gyeonggi-do
  • Assignee: Hynix Semiconductor Inc.
  • Current Assignee: Hynix Semiconductor Inc.
  • Current Assignee Address: KR Gyeonggi-do
  • Agency: IP & T Group LLP
  • Priority: KR10-2011-0017693 20110228
  • Main IPC: G11C7/00
  • IPC: G11C7/00
Semiconductor memory device capable of minimizing current consumption during high speed operation
Abstract:
A semiconductor memory device includes a signal processing unit configured to generate a control signal corresponding to burst length information and an output controlling unit configured to control an output of a data strobe signal in response to the control signal.
Abstract(Chinese):

半导体存储器件包括：信号处理单元，被配置为产生对应于突发长度信息的控制信号;以及输出控制单元，被配置为响应于控制信号来控制数据选通信号的输出。

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