Invention Grant
- Patent Title: Semiconductor device and communication method
- Patent Title (中): 半导体器件和通信方法
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Application No.: US12737195Application Date: 2009-04-14
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Publication No.: US08576967B2Publication Date: 2013-11-05
- Inventor: Atsufumi Shibayama
- Applicant: Atsufumi Shibayama
- Applicant Address: JP Tokyo
- Assignee: NEC Corporation
- Current Assignee: NEC Corporation
- Current Assignee Address: JP Tokyo
- Agency: McGinn IP Law Group, PLLC
- Priority: JP2008-190081 20080723
- International Application: PCT/JP2009/057493 WO 20090414
- International Announcement: WO2010/010745 WO 20100128
- Main IPC: H04L7/00
- IPC: H04L7/00

Abstract:
It is possible to provide a highly reliable semiconductor device and a communication method in which communication can be performed between circuits with a large degree of freedom of clock frequency which can be set in each of the circuits, a decisive operation, and a small communication latency. The semiconductor device according to the present invention includes a first circuit that performs processing based on a first clock signal, the first clock signal having a frequency M/N times as large as a frequency of a second clock signal (N is a positive integer, and M is a positive integer larger than N); a second circuit that performs processing based on the second clock signal; and a communication timing control circuit that generates a communication timing signal to control a timing at which the first circuit performs communication with the second circuit. The communication timing control circuit generates the communication timing signal determined by a frequency ratio information and a phase relation information, the frequency ratio information setting a frequency ratio of the first clock signal to the second clock signal, the phase relation information indicating a phase relation between the first clock signal and the second clock signal.
Public/Granted literature
- US20110089981A1 SEMICONDUCTOR DEVICE AND COMMUNICATION METHOD Public/Granted day:2011-04-21
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