Invention Grant
US08577325B2 Low noise amplifier having both ultra-high linearity and low noise characteristic and radio receiver including the same
有权
具有超高线性度和低噪声特性的低噪声放大器和包括其的无线电接收机
- Patent Title: Low noise amplifier having both ultra-high linearity and low noise characteristic and radio receiver including the same
- Patent Title (中): 具有超高线性度和低噪声特性的低噪声放大器和包括其的无线电接收机
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Application No.: US13050130Application Date: 2011-03-17
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Publication No.: US08577325B2Publication Date: 2013-11-05
- Inventor: Kwy Ro Lee , Bum Kyum Kim , Dong Gu Im , Jae Young Choi
- Applicant: Kwy Ro Lee , Bum Kyum Kim , Dong Gu Im , Jae Young Choi
- Applicant Address: KR Daejeon
- Assignee: Korea Advanced Institute of Science and Technology
- Current Assignee: Korea Advanced Institute of Science and Technology
- Current Assignee Address: KR Daejeon
- Agency: Gesmer Updegrove LLP
- Priority: KR10-2010-0085078 20100831; KR10-2011-0006022 20110120
- Main IPC: H04B1/16
- IPC: H04B1/16

Abstract:
Disclosed herein is a low noise amplifier having both ultra-high linearity and a low noise characteristic and a radio receiver including the low noise amplifier. The low noise amplifier includes a first main transistor unit, a first auxiliary transistor unit, and an optimum noise and input impedance matching capacitor. The first main transistor unit includes a first NMOS transistor and a first PMOS transistor configured to form a complementary common source amplifier, a feedback-type resistor connected between drains of the first NMOS transistor and the first PMOS transistor and configured to generate biases to the two transistors, and bias resistors connected to bodies of the first PMOS transistor and the first NMOS transistor. The first auxiliary transistor unit includes transistors connected to the two transistors. The optimum noise and input impedance matching capacitor is connected to output terminals of the first main transistor unit and the first auxiliary transistor unit.
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