Invention Grant
US08582362B2 Circuit for precharging bit line and nonvolatile memory device including the same
失效
用于对位线进行预充电的电路和包括其的非易失性存储器件
- Patent Title: Circuit for precharging bit line and nonvolatile memory device including the same
- Patent Title (中): 用于对位线进行预充电的电路和包括其的非易失性存储器件
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Application No.: US12650907Application Date: 2009-12-31
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Publication No.: US08582362B2Publication Date: 2013-11-12
- Inventor: Cheul Hee Koo
- Applicant: Cheul Hee Koo
- Applicant Address: KR Gyeonggi-do
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2009-0047822 20090529
- Main IPC: G11C11/34
- IPC: G11C11/34
Abstract:
A nonvolatile memory device includes a memory cell array configured to comprise a number of cell strings, a number of page buffers each coupled to the cell strings of the memory cell array through bit lines, and a bit line precharge circuit configured to precharge a selected bit line up to a voltage of a first level before one of the page buffers precharges the selected bit line.
Public/Granted literature
- US20100302867A1 CIRCUIT FOR PRECHARGING BIT LINE AND NONVOLATILE MEMORY DEVICE INCLUDING THE SAME Public/Granted day:2010-12-02
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