Invention Grant
- Patent Title: LED structure having embedded zener diode
- Patent Title (中): LED结构具有嵌入式齐纳二极管
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Application No.: US13167878Application Date: 2011-06-24
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Publication No.: US08587018B2Publication Date: 2013-11-19
- Inventor: Shouli Steve Hsia , Chih-Kuang Yu , Ken Wen-Chien Fu , Hung-Yi Kuo , Hung-Chao Kao , Ming-Feng Wu , Fu-Chih Yang
- Applicant: Shouli Steve Hsia , Chih-Kuang Yu , Ken Wen-Chien Fu , Hung-Yi Kuo , Hung-Chao Kao , Ming-Feng Wu , Fu-Chih Yang
- Applicant Address: TW Hsinchu
- Assignee: TSMC Solid State Lighting Ltd.
- Current Assignee: TSMC Solid State Lighting Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L33/00
- IPC: H01L33/00
Abstract:
A light emitting diode (LED) structure comprises a first dopant region, a dielectric layer on top of the first dopant region, a bond pad layer on top of a first portion the dielectric layer, and an LED layer having a first LED region and a second LED region. The bond pad layer is electrically connected to the first dopant region. The first LED region is electrically connected to the bond pad layer.
Public/Granted literature
- US20120326198A1 LED STRUCTURE Public/Granted day:2012-12-27
Information query
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