Invention Grant
- Patent Title: Nonvolatile memory devices and programming methods thereof in which a program inhibit voltage is changed during programming
- Patent Title (中): 在编程期间改变程序禁止电压的非易失性存储器件及其编程方法
-
Application No.: US12830903Application Date: 2010-07-06
-
Publication No.: US08588002B2Publication Date: 2013-11-19
- Inventor: Jinman Han
- Applicant: Jinman Han
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Myers Bigel Sibley & Sajovec, P.A.
- Priority: KR10-2009-0064619 20090715
- Main IPC: G11C16/04
- IPC: G11C16/04
Abstract:
Provided are nonvolatile memory devices and programming methods thereof. A non-volatile memory device is programmed by performing a plurality of programming loops on memory cells in a memory cell array and changing a program inhibit voltage applied to bit lines of the memory cells that have completed programming while performing the plurality of programming loops.
Public/Granted literature
Information query
