Invention Grant
US08588266B2 Wavelength tunable semiconductor laser having two difractive grating areas
有权
具有两个折射光栅区域的波长可调谐半导体激光器
- Patent Title: Wavelength tunable semiconductor laser having two difractive grating areas
- Patent Title (中): 具有两个折射光栅区域的波长可调谐半导体激光器
-
Application No.: US11499651Application Date: 2006-08-07
-
Publication No.: US08588266B2Publication Date: 2013-11-19
- Inventor: Takuya Fujii
- Applicant: Takuya Fujii
- Applicant Address: JP Yamanashi
- Assignee: Eudyna Devices Inc.
- Current Assignee: Eudyna Devices Inc.
- Current Assignee Address: JP Yamanashi
- Agency: Westerman, Hattori, Daniels & Adrian, LLP
- Priority: JP2005-232697 20050811
- Main IPC: H01S3/10
- IPC: H01S3/10 ; H01S3/08
Abstract:
A semiconductor laser has a first diffractive grating area. The first diffractive grating area has a plurality of segments. Each segment has a first area including a diffractive grating and a second area that is space area combined to the first area. Optical lengths of at least two of the second areas are different from each other. A refractive-index of each of the segments are changeable.
Public/Granted literature
- US20070036188A1 Semiconductor laser, optical element, laser device, and method of controlling semiconductor laser Public/Granted day:2007-02-15
Information query
