Invention Grant
US08589320B2 Area efficient neuromorphic system that connects a FET in a diode configuration, and a variable resistance material to junctions of neuron circuit blocks 有权
将二极管配置中的FET和可变电阻材料连接到神经元电路块的结的区域有效的神经元系统

Area efficient neuromorphic system that connects a FET in a diode configuration, and a variable resistance material to junctions of neuron circuit blocks
Abstract:
A neuromorphic system includes a plurality of synapse blocks electrically connected to a plurality of neuron circuit blocks. The plurality of synapse blocks includes a plurality of neuromorphic circuits. Each neuromorphic circuit includes a field effect transistor in a diode configuration electrically connected to variable resistance material, where the variable resistance material provides a programmable resistance value. Each neuromorphic circuit also includes a first junction electrically connected to the variable resistance material and an output of one or more of the neuron circuit blocks, and a second junction electrically connected to the field effect transistor and an input of one or more of the neuron circuit blocks.
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