Invention Grant
- Patent Title: Photoresist simulation
- Patent Title (中): 光阻模拟
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Application No.: US12915455Application Date: 2010-10-29
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Publication No.: US08589827B2Publication Date: 2013-11-19
- Inventor: John J. Biafore , Mark D. Smith , John S. Graves, III , David Blankenship
- Applicant: John J. Biafore , Mark D. Smith , John S. Graves, III , David Blankenship
- Applicant Address: US CA Milpitas
- Assignee: KLA-Tencor Corporation
- Current Assignee: KLA-Tencor Corporation
- Current Assignee Address: US CA Milpitas
- Agency: Luedeka Neely Group, P.C.
- Agent Rick Barnes
- Main IPC: G06F17/50
- IPC: G06F17/50 ; G06F17/10 ; G06F7/60 ; G06G7/62 ; G06G7/58 ; G06G7/48
Abstract:
A processor based method for measuring dimensional properties of a photoresist profile. A number acid generators and quenchers within a photoresist volume is determined. A number of photons absorbed by the photoresist volume is determined. A number of the acid generators converted to acid is determined. A number of acid and quencher reactions within the photoresist volume is determined. A development of the photoresist volume is calculated. The processor is used to produce a three-dimensional simulated scanning electron microscope image of the photoresist profile created by the development of the photoresist volume. The dimensional properties of the photoresist profile are measured.
Public/Granted literature
- US20110112809A1 Photoresist Simulation Public/Granted day:2011-05-12
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