Invention Grant
- Patent Title: Method of fabricating a dual single-crystal backplate microphone
- Patent Title (中): 制造双单面背板麦克风的方法
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Application No.: US12870288Application Date: 2010-08-27
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Publication No.: US08590136B2Publication Date: 2013-11-26
- Inventor: Kuang L. Yang , Li Chen , Thomas D. Chen
- Applicant: Kuang L. Yang , Li Chen , Thomas D. Chen
- Applicant Address: US MA Norwood
- Assignee: Analog Devices, Inc.
- Current Assignee: Analog Devices, Inc.
- Current Assignee Address: US MA Norwood
- Agency: Sunstein Kann Murphy & Timbers LLP
- Main IPC: H04R31/00
- IPC: H04R31/00
Abstract:
A dual backplate MEMS microphone system including a flexible diaphragm sandwiched between two single-crystal silicon backplates may be formed by fabricating each backplate in a separate wafer, and then transferring one backplate from its wafer to the other wafer, to form two separate capacitors with the diaphragm.
Public/Granted literature
- US20110075865A1 Dual Single-Crystal Backplate Microphone System and Method Of Fabricating Same Public/Granted day:2011-03-31
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