Invention Grant
- Patent Title: MEMS pressure sensor device and manufacturing method thereof
- Patent Title (中): MEMS压力传感器装置及其制造方法
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Application No.: US13370758Application Date: 2012-02-10
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Publication No.: US08590389B2Publication Date: 2013-11-26
- Inventor: Chin-Fu Hsu , Chia-Hsing Shih
- Applicant: Chin-Fu Hsu , Chia-Hsing Shih
- Applicant Address: TW Hsinchu
- Assignee: Metrodyne Microsystems Corporation, R.O.C.
- Current Assignee: Metrodyne Microsystems Corporation, R.O.C.
- Current Assignee Address: TW Hsinchu
- Agency: Tung & Associates
- Main IPC: G01L9/02
- IPC: G01L9/02 ; H01L21/58

Abstract:
The present invention discloses a Micro-Electro-Mechanical System (MEMS) pressure sensor device and a manufacturing method thereof. The MEMS pressure sensor device includes: a substrate having at least one recess formed on an upper surface thereof, the recess defining a boss; a membrane, which is bonded to at least a part of the upper surface and at least a part of the boss, so that the at least one recess forms a cavity; at least one sensing unit, which is coupled to the membrane, for sensing deflection of the membrane; and an opening, which is formed on a lower surface of the substrate, and connects to the cavity.
Public/Granted literature
- US20130205908A1 MEMS PRESSURE SENSOR DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2013-08-15
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