Invention Grant
- Patent Title: Polycrystalline diamond structure
- Patent Title (中): 多晶金刚石结构
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Application No.: US12962433Application Date: 2010-12-07
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Publication No.: US08590643B2Publication Date: 2013-11-26
- Inventor: Clint Guy Smallman , Moosa Mahomed Adia , Lai Hong Lai Sang
- Applicant: Clint Guy Smallman , Moosa Mahomed Adia , Lai Hong Lai Sang
- Applicant Address: IE County Clare LU Luxembourg
- Assignee: Element Six Limited,Element Six Abrasives S.A.
- Current Assignee: Element Six Limited,Element Six Abrasives S.A.
- Current Assignee Address: IE County Clare LU Luxembourg
- Agency: Bryan Cave LLP
- Main IPC: E21B10/46
- IPC: E21B10/46 ; E21B10/56

Abstract:
A PCD structure comprising a first region, in a state of residual compressive stress, and a second region in a state of residual tensile stress adjacent the first region; the first and second regions each formed of respective PCD grades and directly bonded to each other by intergrowth of diamond grains, the PCD grades having transverse rupture strength (TRS) of at least 1,200 MPa. A third region in a state of residual compressive stress may also be provided such that the second region is disposed between the first and third regions and is bonded to the first and third regions by intergrowth of diamond grains.
Public/Granted literature
- US20110132667A1 POLYCRYSTALLINE DIAMOND STRUCTURE Public/Granted day:2011-06-09
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