Invention Grant
- Patent Title: Semi-conductor substrate and method of masking layer for producing a free-standing semi-conductor substrate by means of hydride-gas phase epitaxy
- Patent Title (中): 半导体基板和通过氢化物 - 气相外延生产独立的半导体基板的掩模层的方法
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Application No.: US11996446Application Date: 2006-08-24
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Publication No.: US08591652B2Publication Date: 2013-11-26
- Inventor: Christian Hennig , Markus Weyers , Eberhard Richter , Guenther Traenkle
- Applicant: Christian Hennig , Markus Weyers , Eberhard Richter , Guenther Traenkle
- Applicant Address: DE Freiberg
- Assignee: Freiberger Compound Materials GmbH
- Current Assignee: Freiberger Compound Materials GmbH
- Current Assignee Address: DE Freiberg
- Agency: Foley & Lardner LLP
- Priority: DE102005041643 20050829
- International Application: PCT/EP2006/065659 WO 20060824
- International Announcement: WO2007/025930 WO 20070308
- Main IPC: C30B25/04
- IPC: C30B25/04
Abstract:
The invention relates to a free-standing semiconductor substrate as well as a process and a mask layer for the manufacture of a free-standing semiconductor substrate, wherein the material for forming the mask layer consists at least partially of tungsten silicide nitride or tungsten silicide and wherein the semiconductor substrate self-separates from the starting substrate without further process steps.
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