Invention Grant
- Patent Title: Sputter deposition shield assembly to reduce cathode shorting
- Patent Title (中): 溅射沉积屏蔽组件可减少阴极短路
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Application No.: US12782662Application Date: 2010-05-18
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Publication No.: US08591709B1Publication Date: 2013-11-26
- Inventor: Chichoy Lim , Eang Keong Tan , Weng Aun Teh , Yi Chun Tan , Sheik Chian Lee
- Applicant: Chichoy Lim , Eang Keong Tan , Weng Aun Teh , Yi Chun Tan , Sheik Chian Lee
- Applicant Address: US CA San Jose
- Assignee: WD Media, LLC
- Current Assignee: WD Media, LLC
- Current Assignee Address: US CA San Jose
- Main IPC: C23C14/04
- IPC: C23C14/04

Abstract:
A shield assembly for a sputter deposition chamber, the shield assembly including an outer sleeve with a gas inlet to conduct a gas through the outer sleeve and an inner sleeve disposed within the outer sleeve, the inner sleeve including gas channels on a surface mating with the outer sleeve to conduct the gas between the inner and outer sleeves. The shield assembly may further include an aperture ring adjacent to a first end of both the inner and outer sleeves, the aperture ring including a plurality of gas outlets to conduct the gas from the gas channels and an inner aperture flange extending from the plurality of gas outlets and adjacent to gas shield flange to form a gas runway for conducting the gas toward a sputter target located within the deposition chamber.
Information query
IPC分类: