FinFET diode with increased junction area

Invention Grant

US08592263B2 FinFET diode with increased junction area 失效

Title translation: FinFET二极管具有增加的接合面积

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Patent Title: FinFET diode with increased junction area
Patent Title (中): FinFET二极管具有增加的接合面积
Application No.: US13456921

Application Date: 2012-04-26
Publication No.: US08592263B2

Publication Date: 2013-11-26
Inventor: Theodorus Eduardus Standaert , Kangguo Cheng , Balasubramanian S. Haran , Shom Ponoth , Tenko Yamashita
Applicant: Theodorus Eduardus Standaert , Kangguo Cheng , Balasubramanian S. Haran , Shom Ponoth , Tenko Yamashita
Applicant Address: US NY Armonk
Assignee: International Business Machines Corporation
Current Assignee: International Business Machines Corporation
Current Assignee Address: US NY Armonk
Agent Joseph P. Abate; Howard M. Cohn
Main IPC: H01L21/84
IPC: H01L21/84

FinFET diode with increased junction area

Abstract:

A FinFET diode and method of fabrication are disclosed. In one embodiment, the diode comprises, a semiconductor substrate, an insulator layer disposed on the semiconductor substrate, a first silicon layer disposed on the insulator layer, a plurality of fins formed in a diode portion of the first silicon layer. A region of the first silicon layer is disposed adjacent to each of the plurality of fins. A second silicon layer is disposed on the plurality of fins formed in the diode portion of the first silicon layer. A gate ring is disposed on the first silicon layer. The gate ring is arranged in a closed shape, and encloses a portion of the plurality of fins formed in the diode portion of the first silicon layer.

Abstract(Chinese):

公开了一种FinFET二极管及其制造方法。在一个实施例中，二极管包括半导体衬底，设置在半导体衬底上的绝缘体层，设置在绝缘体层上的第一硅层，形成在第一硅层的二极管部分中的多个鳍片。第一硅层的区域设置成与多个翅片中的每一个相邻。第二硅层设置在形成在第一硅层的二极管部分中的多个翅片上。栅极环设置在第一硅层上。门环布置成闭合形状，并且包围形成在第一硅层的二极管部分中的多个翅片的一部分。

Public/Granted literature

US20130285208A1 FINFET DIODE WITH INCREASED JUNCTION AREA Public/Granted day:2013-10-31

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77	..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78	...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82	....制造器件，例如每一个由许多元件组成的集成电路
H01L21/84	.....衬底不是半导体的，例如绝缘体