Invention Grant
US08592264B2 Source-drain extension formation in replacement metal gate transistor device
有权
源极 - 漏极扩展形成在替代金属栅极晶体管器件中
- Patent Title: Source-drain extension formation in replacement metal gate transistor device
- Patent Title (中): 源极 - 漏极扩展形成在替代金属栅极晶体管器件中
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Application No.: US13332991Application Date: 2011-12-21
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Publication No.: US08592264B2Publication Date: 2013-11-26
- Inventor: Takashi Ando , Huiming Bu , Ramachandra Divakaruni , Bruce B. Doris , Chung-Hsun Lin , Huiling Shang , Tenko Yamashita
- Applicant: Takashi Ando , Huiming Bu , Ramachandra Divakaruni , Bruce B. Doris , Chung-Hsun Lin , Huiling Shang , Tenko Yamashita
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Harrington & Smith
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L21/336
Abstract:
A method includes forming on a surface of a semiconductor a dummy gate structure comprised of a plug; forming a first spacer surrounding the plug, the first spacer being a sacrificial spacer; and performing an angled ion implant so as to implant a dopant species into the surface of the semiconductor adjacent to an outer sidewall of the first spacer to form a source extension region and a drain extension region, where the implanted dopant species extends under the outer sidewall of the first spacer by an amount that is a function of the angle of the ion implant. The method further includes performing a laser anneal to activate the source extension and the drain extension implant. The method further includes forming a second spacer surrounding the first spacer, removing the first spacer and the plug to form an opening, and depositing a gate stack in the opening.
Public/Granted literature
- US20130161763A1 SOURCE-DRAIN EXTENSION FORMATION IN REPLACEMENT METAL GATE TRANSISTOR DEVICE Public/Granted day:2013-06-27
Information query
IPC分类:
