Semiconductor structures using replacement gate and methods of manufacture

Invention Grant

US08592268B2 Semiconductor structures using replacement gate and methods of manufacture 有权

Title translation: 采用替代栅极的半导体结构和制造方法

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Patent Title: Semiconductor structures using replacement gate and methods of manufacture
Patent Title (中): 采用替代栅极的半导体结构和制造方法
Application No.: US13862901

Application Date: 2013-04-15
Publication No.: US08592268B2

Publication Date: 2013-11-26
Inventor: John J. Ellis-Monaghan , Jeffrey P. Gambino , Kirk D. Peterson , Jed H. Rankin
Applicant: International Business Machines Corporation
Applicant Address: US NY Armonk
Assignee: International Business Machines Corporation
Current Assignee: International Business Machines Corporation
Current Assignee Address: US NY Armonk
Agency: Roberts Mlotkowski Safran & Cole, P.C.
Agent David Cain
Main IPC: H01L21/8238
IPC: H01L21/8238

Semiconductor structures using replacement gate and methods of manufacture

Abstract:

An improved semiconductor device manufactured using, for example, replacement gate technologies. The method includes forming a dummy gate structure having a gate stack and spacers. The method further includes forming a dielectric material adjacent to the dummy gate structure. The method further includes removing the spacers to form gaps, and implanting a halo extension through the gaps and into an underlying diffusion region.

Abstract(Chinese):

使用例如替换栅极技术制造的改进的半导体器件。该方法包括形成具有栅极堆叠和间隔物的虚拟栅极结构。该方法还包括形成与虚拟栅极结构相邻的电介质材料。该方法还包括去除间隔物以形成间隙，并且通过间隙注入卤素延伸并进入下面的扩散区域。

Public/Granted literature

US20130228835A1 SEMICONDUCTOR STRUCTURES USING REPLACEMENT GATE AND METHODS OF MANUFACTURE Public/Granted day:2013-09-05

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77	..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78	...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82	....制造器件，例如每一个由许多元件组成的集成电路
H01L21/822	.....衬底是采用硅工艺的半导体的（H01L21/8258优先）
H01L21/8232	......场效应工艺
H01L21/8234	.......MIS工艺
H01L21/8238	........互补场效应晶体管，例如CMOS