Semiconductor device and production method thereof

Invention Grant

US08592275B2 Semiconductor device and production method thereof 有权

Title translation: 半导体装置及其制造方法

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Patent Title: Semiconductor device and production method thereof
Patent Title (中): 半导体装置及其制造方法
Application No.: US13888922

Application Date: 2013-05-07
Publication No.: US08592275B2

Publication Date: 2013-11-26
Inventor: Yoshiyuki Kawashima
Applicant: Renesas Electronics Corporation
Applicant Address: JP Kawasaki-shi
Assignee: Renesas Electronics Corporation
Current Assignee: Renesas Electronics Corporation
Current Assignee Address: JP Kawasaki-shi
Agency: Miles & Stockbridge P.C.
Priority: JP2009-132668 20090602
Main IPC: H01L21/8239
IPC: H01L21/8239

Semiconductor device and production method thereof

Abstract:

An object of the present invention is to provide a semiconductor device having a nonvolatile memory cell of a high operation speed and a high rewrite cycle and a nonvolatile memory cell of high reliability. In a split gate type nonvolatile memory in which memory gate electrodes are formed in the shape of sidewalls of control gate electrodes, it is possible to produce a memory chip having a memory of a high operation speed and a high rewrite cycle and a memory of high reliability at a low cost by jointly loading memory cells having different memory gate lengths in an identical chip.

Abstract(Chinese):

本发明的目的是提供一种具有高操作速度和高重写周期的非易失性存储单元和高可靠性的非易失性存储单元的半导体器件。在其中存储栅电极形成为控制栅电极的侧壁形状的分离栅型非易失性存储器中，可以产生具有高操作速度和高重写周期的存储器和高存储器的存储芯片通过在相同的芯片中共同加载具有不同存储器栅极长度的存储单元，以低成本的可靠性。

Public/Granted literature

US20130244391A1 SEMICONDUCTOR DEVICE AND PRODUCTION METHOD THEREOF Public/Granted day:2013-09-19

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77	..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78	...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82	....制造器件，例如每一个由许多元件组成的集成电路
H01L21/822	.....衬底是采用硅工艺的半导体的（H01L21/8258优先）
H01L21/8232	......场效应工艺
H01L21/8234	.......MIS工艺
H01L21/8239	........存储器结构