Invention Grant
- Patent Title: Method of bonding semiconductor substrate and MEMS device
- Patent Title (中): 半导体衬底和MEMS器件的接合方法
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Application No.: US13513055Application Date: 2009-12-11
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Publication No.: US08592285B2Publication Date: 2013-11-26
- Inventor: Naoki Noda , Toshio Yokouchi , Masahiro Ishimori
- Applicant: Naoki Noda , Toshio Yokouchi , Masahiro Ishimori
- Applicant Address: JP Kanagawa JP Yamanashi
- Assignee: Pioneer Corporation,Pioneer Micro Technology Corporation
- Current Assignee: Pioneer Corporation,Pioneer Micro Technology Corporation
- Current Assignee Address: JP Kanagawa JP Yamanashi
- Agency: Young & Thompson
- International Application: PCT/JP2009/006787 WO 20091211
- International Announcement: WO2011/070626 WO 20110616
- Main IPC: H01L29/84
- IPC: H01L29/84
Abstract:
A method of bonding a semiconductor substrate has a step of pressurizing and heating to bond a substrate 11 with a substrate 12 by eutectic bonding in a state that an aluminum containing layer 31 and a germanium layer 32 between a bonding section 30a of the substrate 11 and a bonding section 30b of the substrate 21 are overlaid and an outer end 32a of the germanium layer 32 is receded inward with respect to an outer end 31a of the aluminum containing layer 31.
Public/Granted literature
- US20120306032A1 METHOD OF BONDING SEMICONDUCTOR SUBSTRATE AND MEMS DEVICE Public/Granted day:2012-12-06
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