Invention Grant
US08592293B2 Schottky barrier diodes for millimeter wave SiGe BiCMOS applications
有权
用于毫米波SiGe BiCMOS应用的肖特基势垒二极管
- Patent Title: Schottky barrier diodes for millimeter wave SiGe BiCMOS applications
- Patent Title (中): 用于毫米波SiGe BiCMOS应用的肖特基势垒二极管
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Application No.: US13028673Application Date: 2011-02-16
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Publication No.: US08592293B2Publication Date: 2013-11-26
- Inventor: Jeffrey B. Johnson , Xuefeng Liu , Bradley A. Orner , Robert M. Rassel
- Applicant: Jeffrey B. Johnson , Xuefeng Liu , Bradley A. Orner , Robert M. Rassel
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Roberts Mlotkowski Safran & Cole, P.C.
- Agent Anthony Canale
- Main IPC: H01L21/28
- IPC: H01L21/28
Abstract:
A method for forming a Schottky barrier diode on a SiGe BiCMOS wafer, including forming a structure which provides a cutoff frequency (Fc) above about 1.0 THz. In embodiments, the structure which provides a cutoff frequency (Fc) above about 1.0 THz may include an anode having an anode area which provides a cutoff frequency (FC) above about 1.0 THz, an n-epitaxial layer having a thickness which provides a cutoff frequency (FC) above about 1.0 THz, a p-type guardring at an energy and dosage which provides a cutoff frequency (FC) above about 1.0 THz, the p-type guardring having a dimension which provides a cutoff frequency (FC) above about 1.0 THz, and a well tailor with an n-type dopant which provides a cutoff frequency (FC) above about 1.0 THz.
Public/Granted literature
- US20110143494A1 SCHOTTKY BARRIER DIODES FOR MILLIMETER WAVE SiGe BICMOS APPLICATIONS Public/Granted day:2011-06-16
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