Invention Grant
US08592327B2 Formation of SiOCl-containing layer on exposed low-k surfaces to reduce low-k damage
有权
在暴露的低k表面上形成含SiOCl的层以降低低k损伤
- Patent Title: Formation of SiOCl-containing layer on exposed low-k surfaces to reduce low-k damage
- Patent Title (中): 在暴露的低k表面上形成含SiOCl的层以降低低k损伤
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Application No.: US13413878Application Date: 2012-03-07
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Publication No.: US08592327B2Publication Date: 2013-11-26
- Inventor: Alok Ranjan , Kaushik Arun Kumar
- Applicant: Alok Ranjan , Kaushik Arun Kumar
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Main IPC: H01L21/31
- IPC: H01L21/31 ; H01L21/469
Abstract:
A method for protecting an exposed low-k surface is described. The method includes receiving a substrate having a mask layer and a low-k layer formed thereon, wherein a pattern formed in the mask layer using a lithographic process has been transferred to the low-k layer using an etching process to form a structural feature therein. Additionally, the method includes forming a SiOCl-containing layer on exposed surfaces of the mask layer and the low-k layer, and anisotropically removing the SiOCl-containing layer from a top surface of the mask layer and a bottom surface of the structural feature in the low-k layer, while retaining a remaining portion of the SiOCl-containing layer on sidewall surfaces of the structural feature. The method further includes performing an ashing process to remove the mask layer, and thereafter, selectively removing the remaining portion of the SiOCl-containing layer from the sidewall surfaces of the structural feature.
Public/Granted literature
- US20130237060A1 FORMATION OF SiOCl-CONTAINING LAYER ON EXPOSED LOW-K SURFACES TO REDUCE LOW-K DAMAGE Public/Granted day:2013-09-12
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