Invention Grant
- Patent Title: Thermopile infrared sensor by monolithic silicon micromachining
- Patent Title (中): 热电堆红外传感器采用单片硅微加工
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Application No.: US13005853Application Date: 2011-01-13
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Publication No.: US08592765B2Publication Date: 2013-11-26
- Inventor: Bodo Forg , Frank Herrmann , Wilhelm Leneke , Joerg Schieferdecker , Marion Simon , Karlheinz Storck , Mischa Schulze
- Applicant: Bodo Forg , Frank Herrmann , Wilhelm Leneke , Joerg Schieferdecker , Marion Simon , Karlheinz Storck , Mischa Schulze
- Applicant Address: DE Dresden
- Assignee: HEIMANN Sensor GmbH
- Current Assignee: HEIMANN Sensor GmbH
- Current Assignee Address: DE Dresden
- Agency: Heslin Rothenberg Farley & Mesiti P.C.
- Priority: DE102010004938 20100118; DE102010042108 20101007
- Main IPC: G01J5/12
- IPC: G01J5/12

Abstract:
A thermal infrared sensor is provided in a housing with optics and a chip with thermoelements on a membrane. The membrane spans a frame-shaped support body that is a good heat conductor, and the support body has vertical or approximately vertical walls. The thermopile sensor structure consists of a few long thermoelements per sensor cell. The thermoelements being arranged on connecting webs that connect together hot contacts on an absorber layer to cold contacts of the thermoelements. The membrane is suspended by one or more connecting webs and has, on both sides of the long thermoelements, narrow slits that separate the connecting webs from both the central region and also the support body. At least the central region is covered by the absorber layer.
Public/Granted literature
- US20110174978A1 THERMOPILE INFRARED SENSOR BY MONOLITHIC SILICON MICROMACHINING Public/Granted day:2011-07-21
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