Invention Grant
- Patent Title: Phase-change random access memory device and method of manufacturing the same
- Patent Title (中): 相变随机存取存储器件及其制造方法
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Application No.: US13489816Application Date: 2012-06-06
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Publication No.: US08592790B2Publication Date: 2013-11-26
- Inventor: Nam Kyun Park
- Applicant: Nam Kyun Park
- Applicant Address: KR Gyeonggi-do
- Assignee: SK hynix Inc.
- Current Assignee: SK hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2011-0126144 20111129
- Main IPC: H01L29/02
- IPC: H01L29/02
Abstract:
A phase-change random access memory (PCRAM) device includes a semiconductor substrate; switching elements formed on the semiconductor substrate; a plurality of phase-change structures formed on the switching elements; and heat absorption layers buried between the plurality of phase-change structures, wherein the plurality of phase-change structures are insulated from the heat absorption layers.
Public/Granted literature
- US20130134371A1 PHASE-CHANGE RANDOM ACCESS MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2013-05-30
Information query
IPC分类:
