Invention Grant
- Patent Title: Thin film, method of forming the same, and semiconductor light-emitting element comprising the thin film
- Patent Title (中): 薄膜，其形成方法以及包含该薄膜的半导体发光元件
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Application No.: US13500931Application Date: 2010-10-07
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Publication No.: US08592810B2Publication Date: 2013-11-26
- Inventor: Tadahiro Ohmi , Hirokazu Asahara , Atsutoshi Inokuchi
- Applicant: Tadahiro Ohmi , Hirokazu Asahara , Atsutoshi Inokuchi
- Applicant Address: JP Miyagi JP Kyoto
- Assignee: National University Corporation Tohoku University,Rohm Co., Ltd.
- Current Assignee: National University Corporation Tohoku University,Rohm Co., Ltd.
- Current Assignee Address: JP Miyagi JP Kyoto
- Agency: Morgan, Lewis & Bockius LLP
- Priority: JP2009-235346 20091009
- International Application: PCT/JP2010/067637 WO 20101007
- International Announcement: WO2011/043414 WO 20110414
- Main IPC: H01L21/365
- IPC: H01L21/365
Abstract:
It is an object of the present invention to stably form an N-doped ZnO-based compound thin film. In the present invention, a gas containing oxygen and nitrogen and a nitrogen gas together with an organometallic material gas are supplied into a low-electron-temperature high-density plasma which is excited by microwave, thereby forming the N-doped ZnO-based compound thin film on a substrate as a film forming object.
Public/Granted literature
- US20120205652A1 THIN FILM, METHOD OF FORMING THE SAME, AND SEMICONDUCTOR LIGHT-EMITTING ELEMENT COMPRISING THE THIN FILM Public/Granted day:2012-08-16
Information query
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