Invention Grant
US08592826B2 Silicon carbide and related wide-bandgap transistors on semi insulating epitaxy
有权
碳化硅和半绝缘外延上的相关宽带隙晶体管
- Patent Title: Silicon carbide and related wide-bandgap transistors on semi insulating epitaxy
- Patent Title (中): 碳化硅和半绝缘外延上的相关宽带隙晶体管
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Application No.: US13449502Application Date: 2012-04-18
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Publication No.: US08592826B2Publication Date: 2013-11-26
- Inventor: Michael S. Mazzola
- Applicant: Michael S. Mazzola
- Main IPC: H01L29/15
- IPC: H01L29/15 ; H01L31/0312
Abstract:
A method of making a semi-insulating epitaxial layer includes implanting a substrate or a first epitaxial layer formed on the substrate with boron ions to form a boron implanted region on a surface of the substrate or on a surface of the first epitaxial layer, and growing a second epitaxial layer on the boron implanted region of the substrate or on the boron implanted region of the first epitaxial layer to form a semi-insulating epitaxial layer.
Public/Granted literature
- US20120199940A1 SILICON CARBIDE AND RELATED WIDE-BANDGAP TRANSISTORS ON SEMI INSULATING EPITAXY Public/Granted day:2012-08-09
Information query
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