Invention Grant
- Patent Title: Light-emitting diode and method for fabrication thereof
- Patent Title (中): 发光二极管及其制造方法
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Application No.: US12161452Application Date: 2007-01-18
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Publication No.: US08592858B2Publication Date: 2013-11-26
- Inventor: Wataru Nabekura
- Applicant: Wataru Nabekura
- Applicant Address: JP Tokyo
- Assignee: Showa Denko K.K.
- Current Assignee: Showa Denko K.K.
- Current Assignee Address: JP Tokyo
- Agency: Sughrue Mion, PLLC
- Priority: JP2006-013514 20060123
- International Application: PCT/JP2007/051111 WO 20070118
- International Announcement: WO2007/083829 WO 20070726
- Main IPC: H01L33/00
- IPC: H01L33/00
Abstract:
A light-emitting diode (10) includes a transparent substrate and a compound semiconductor layer that contains a light-emitting part (12) containing a light-emitting layer (133) formed of (AlXGa1-X)YIn1-YP (0≦X≦1 and 0
Public/Granted literature
- US20090206359A1 LIGHT-EMITTING DIODE AND METHOD FOR FABRICATION THEREOF Public/Granted day:2009-08-20
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