Drain extended CMOS with counter-doped drain extension

Invention Grant

US08592900B2 Drain extended CMOS with counter-doped drain extension 有权

Title translation: 漏极扩展扩展CMOS

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Patent Title: Drain extended CMOS with counter-doped drain extension
Patent Title (中): 漏极扩展扩展CMOS
Application No.: US13288690

Application Date: 2011-11-03
Publication No.: US08592900B2

Publication Date: 2013-11-26
Inventor: Philipp Steinmann , Amitava Chatterjee , Sameer Pendharkar
Applicant: Philipp Steinmann , Amitava Chatterjee , Sameer Pendharkar
Applicant Address: US TX Dallas
Assignee: Texas Instruments Incorporated
Current Assignee: Texas Instruments Incorporated
Current Assignee Address: US TX Dallas
Agent W. James Brady, III; Frederick J. Telecky, Jr.
Main IPC: H01L21/00
IPC: H01L21/00

Drain extended CMOS with counter-doped drain extension

Abstract:

An integrated circuit containing a diode with a drift region containing a first dopant type plus scattering centers. An integrated circuit containing a DEMOS transistor with a drift region containing a first dopant type plus scattering centers. A method for designing an integrated circuit containing a DEMOS transistor with a counter doped drift region.

Abstract(Chinese):

一种集成电路，其包含具有包含第一掺杂剂型和散射中心的漂移区的二极管。一种包含DEMOS晶体管的集成电路，其具有包含第一掺杂剂型和散射中心的漂移区。一种用于设计包含具有反掺杂漂移区的DEMOS晶体管的集成电路的方法。

Public/Granted literature

US20120112275A1 Drain Extended CMOS with Counter-Doped Drain Extension Public/Granted day:2012-05-10

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备