Invention Grant
- Patent Title: Substrate bonding with metal germanium silicon material
- Patent Title (中): 与金属锗硅材料基板接合
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Application No.: US13273389Application Date: 2011-10-14
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Publication No.: US08592926B2Publication Date: 2013-11-26
- Inventor: Ruben B. Montez , Alex P. Pamatat
- Applicant: Ruben B. Montez , Alex P. Pamatat
- Applicant Address: US TX Austin
- Assignee: Freescale Semiconductor, Inc.
- Current Assignee: Freescale Semiconductor, Inc.
- Current Assignee Address: US TX Austin
- Agent David G. Dolezal; James L. Clingan, Jr.
- Main IPC: H01L21/50
- IPC: H01L21/50 ; H01L23/10 ; B81C1/00
Abstract:
In one embodiment, a semiconductor structure including a first substrate, a semiconductor device on the first substrate, a second substrate, and a conductive bond between the first substrate and the second substrate that surrounds the semiconductor device to seal the semiconductor device between the first substrate and the second substrate. The conductive bond comprises metal, silicon, and germanium. A percentage by atomic weight of silicon in the conductive bond is greater than 5%.
Public/Granted literature
- US20120068325A1 SUBSTRATE BONDING WITH METAL GERMANIUM SILICON MATERIAL Public/Granted day:2012-03-22
Information query
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