Invention Grant
- Patent Title: Photoelectric conversion element and solid-state imaging device
- Patent Title (中): 光电转换元件和固态成像器件
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Application No.: US12361661Application Date: 2009-01-29
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Publication No.: US08592931B2Publication Date: 2013-11-26
- Inventor: Masayuki Hayashi , Fumito Nariyuki
- Applicant: Masayuki Hayashi , Fumito Nariyuki
- Applicant Address: JP Tokyo
- Assignee: FUJIFILM Corporation
- Current Assignee: FUJIFILM Corporation
- Current Assignee Address: JP Tokyo
- Agency: Sughrue Mion, PLLC
- Priority: JP2008-018879 20080130
- Main IPC: H01L27/14
- IPC: H01L27/14 ; H01L31/00

Abstract:
A photoelectric conversion element is provided and includes: a pair of electrodes; a photoelectric conversion layer between the pair of electrodes; and a charge-blocking layer between one of the pair of the electrodes and the photoelectric conversion layer. The charge-blocking layer is capable of suppressing injection of a charge from the one of the pair of electrodes into the photoelectric conversion layer upon application of a voltage across the pair of electrodes, and the charge-blocking layer contains an insulating material and an electrically conductive material.
Public/Granted literature
- US20090188547A1 PHOTOELECTRIC CONVERSION ELEMENT AND SOLID-STATE IMAGING DEVICE Public/Granted day:2009-07-30
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