Invention Grant
US08592949B2 Method of texturing the surface of a silicon substrate, and textured silicon substrate for a solar cell
有权
硅衬底的表面纹理化和太阳能电池的织构化硅衬底的方法
- Patent Title: Method of texturing the surface of a silicon substrate, and textured silicon substrate for a solar cell
- Patent Title (中): 硅衬底的表面纹理化和太阳能电池的织构化硅衬底的方法
-
Application No.: US13391884Application Date: 2010-08-23
-
Publication No.: US08592949B2Publication Date: 2013-11-26
- Inventor: Pere Roca I Cabarrocas , Mario Moreno , Dimitri Daineka
- Applicant: Pere Roca I Cabarrocas , Mario Moreno , Dimitri Daineka
- Applicant Address: FR Palaiseau FR Paris
- Assignee: Ecole Polytechnique,Centre National de la Recherche Scientifique
- Current Assignee: Ecole Polytechnique,Centre National de la Recherche Scientifique
- Current Assignee Address: FR Palaiseau FR Paris
- Agency: Young & Thompson
- Priority: FR0955767 20090824
- International Application: PCT/FR2010/051756 WO 20100823
- International Announcement: WO2011/023894 WO 20110303
- Main IPC: H01L29/34
- IPC: H01L29/34

Abstract:
The invention relates to a method for texturing the surface of a gaseous phase silicon substrate, and to a textured silicon substrate for a solar cell. The method includes at least a step a) of exposing the surface to an SF6/O2 radiofrequency plasma for a duration of 2 to 30 minutes in order to produce a silicon substrate having a textured surface having pyramidal structures, the SF6/O2 ratio being 2 to 10. During step a) the power density generated using the radiofrequency plasma is greater than or equal to 2500 mW/cm2, and the SF6/O2 pressure in the reaction chamber is lower than or equal to 100 mTorrs, so as to produce a silicon substrate having a textured surface having inverted pyramidal structures.
Public/Granted literature
- US20120146194A1 METHOD OF TEXTURING THE SURFACE OF A SILICON SUBSTRATE, AND TEXTURED SILICON SUBSTRATE FOR A SOLAR CELL Public/Granted day:2012-06-14
Information query
IPC分类: