Invention Grant
US08592949B2 Method of texturing the surface of a silicon substrate, and textured silicon substrate for a solar cell 有权
硅衬底的表面纹理化和太阳能电池的织构化硅衬底的方法

Method of texturing the surface of a silicon substrate, and textured silicon substrate for a solar cell
Abstract:
The invention relates to a method for texturing the surface of a gaseous phase silicon substrate, and to a textured silicon substrate for a solar cell. The method includes at least a step a) of exposing the surface to an SF6/O2 radiofrequency plasma for a duration of 2 to 30 minutes in order to produce a silicon substrate having a textured surface having pyramidal structures, the SF6/O2 ratio being 2 to 10. During step a) the power density generated using the radiofrequency plasma is greater than or equal to 2500 mW/cm2, and the SF6/O2 pressure in the reaction chamber is lower than or equal to 100 mTorrs, so as to produce a silicon substrate having a textured surface having inverted pyramidal structures.
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