Invention Grant
- Patent Title: Structures including passivated germanium
- Patent Title (中): 结构包括钝化锗
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Application No.: US13740399Application Date: 2013-01-14
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Publication No.: US08592953B2Publication Date: 2013-11-26
- Inventor: Kie Y. Ahn , Leonard Forbes
- Applicant: Round Rock Reseach, LLC
- Applicant Address: US NJ Jersey City
- Assignee: Round Rock Research, LLC
- Current Assignee: Round Rock Research, LLC
- Current Assignee Address: US NJ Jersey City
- Agency: Lerner, David, Littenberg, Krumholz & Mentlik, LLP
- Main IPC: H01L29/06
- IPC: H01L29/06
Abstract:
A passivated germanium surface that is a germanium carbide material formed on and in contact with the germanium material. A semiconductor device structure having the passivated germanium having germanium carbide material on the substrate surface is also disclosed.
Public/Granted literature
- US20130153902A1 STRUCTURES INCLUDING PASSIVATED GERMANIUM Public/Granted day:2013-06-20
Information query
IPC分类:
