Invention Grant
- Patent Title: Semiconductor element and method of manufacturing the semiconductor element
- Patent Title (中): 半导体元件及半导体元件的制造方法
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Application No.: US13171303Application Date: 2011-06-28
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Publication No.: US08592954B2Publication Date: 2013-11-26
- Inventor: Keiji Emura , Fumihiro Inoue
- Applicant: Keiji Emura , Fumihiro Inoue
- Applicant Address: JP Anan-shi
- Assignee: Nichia Corporation
- Current Assignee: Nichia Corporation
- Current Assignee Address: JP Anan-shi
- Agency: Global IP Counselors, LLP
- Priority: JP2010-147133 20100629
- Main IPC: H01L29/02
- IPC: H01L29/02

Abstract:
A semiconductor element includes a semiconductor layer, an electrode, an adhesion layer, and an insulating layer. The electrode is disposed over the semiconductor layer and has a first upper surface and a second upper surface disposed further away from the semiconductor layer than the first upper surface. The adhesion layer is disposed on the first upper surface of the electrode so that the second upper surface of the electrode is disposed further away from the semiconductor layer than an upper surface of the adhesion layer. The insulating layer covers from the upper surface of the adhesion layer to the semiconductor layer.
Public/Granted literature
- US20110316126A1 Semiconductor element and method of manufacturing the semiconductor element Public/Granted day:2011-12-29
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