Invention Grant
- Patent Title: Semiconductor apparatus and power supply circuit
- Patent Title (中): 半导体装置和电源电路
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Application No.: US13146603Application Date: 2010-01-28
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Publication No.: US08592967B2Publication Date: 2013-11-26
- Inventor: Tohru Umeno
- Applicant: Tohru Umeno
- Applicant Address: JP Tokyo
- Assignee: Hitachi Metals, Ltd.
- Current Assignee: Hitachi Metals, Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Sughrue Mion, PLLC
- Priority: JP2009-017284 20090128
- International Application: PCT/JP2010/051150 WO 20100128
- International Announcement: WO2010/087407 WO 20100805
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/52
Abstract:
A semiconductor apparatus comprising an integrated semiconductor circuit device having pluralities of electrode pads, pluralities of first external terminals connected to the electrode pads of the integrated semiconductor circuit device, an inductor disposed in a region surrounded by the first external terminals, and a resin portion sealing them, the integrated semiconductor circuit device being arranged on an upper surface of the inductor, and the inductor being exposed from a lower surface of the resin portion together with the first external terminals.
Public/Granted literature
- US20110284989A1 SEMICONDUCTOR APPARATUS AND POWER SUPPLY CIRCUIT Public/Granted day:2011-11-24
Information query
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