Invention Grant
US08592968B2 Semiconductor device, semiconductor package, interposer, semiconductor device manufacturing method and interposer manufacturing method
有权
半导体器件，半导体封装，插入器，半导体器件制造方法和插入件制造方法
- Patent Title: Semiconductor device, semiconductor package, interposer, semiconductor device manufacturing method and interposer manufacturing method
- Patent Title (中): 半导体器件，半导体封装，插入器，半导体器件制造方法和插入件制造方法
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Application No.: US13563560Application Date: 2012-07-31
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Publication No.: US08592968B2Publication Date: 2013-11-26
- Inventor: Koujirou Shibuya
- Applicant: Koujirou Shibuya
- Applicant Address: JP Kawasaki-shi, Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kawasaki-shi, Kanagawa
- Agency: McGinn IP Law Group, PLLC
- Priority: JP2010-030438 20100215
- Main IPC: H01L23/52
- IPC: H01L23/52 ; H01L23/48
Abstract:
A semiconductor device includes an interposer having a base member including a first surface and a second surface opposite to the first surface, a first interconnect formed on the first surface of the base member, a first insulating film formed on the first surface of the base member, a first external terminal and a second external terminal neighboring the first external terminal formed on the second surface of the base member, a second interconnect formed on the second surface of the base member and passing between the first external terminal and the second external terminal, and a second insulating film formed on the second surface of the base member, a semiconductor chip mounted on the first insulating film, a sealing resin formed on the first insulating film and sealing the semiconductor chip. The second insulating film has an opening so that the second interconnect is exposed in an area.
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