Invention Grant
- Patent Title: Semiconductor package having proximity communication signal input terminals and manufacturing methods thereof
- Patent Title (中): 具有接近通信信号输入端子的半导体封装及其制造方法
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Application No.: US13252850Application Date: 2011-10-04
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Publication No.: US08592982B2Publication Date: 2013-11-26
- Inventor: Yi-Shao Lai , Tsung-Yueh Tsai , Ming-Kun Chen , Tai-Ping Wang , Ming-Hsiang Cheng
- Applicant: Yi-Shao Lai , Tsung-Yueh Tsai , Ming-Kun Chen , Tai-Ping Wang , Ming-Hsiang Cheng
- Applicant Address: TW Kaosiung
- Assignee: Advanced Semiconductor Engineering, Inc.
- Current Assignee: Advanced Semiconductor Engineering, Inc.
- Current Assignee Address: TW Kaosiung
- Agency: Foley & Lardner LLP
- Priority: CN201010613151 20101218
- Main IPC: H01L23/52
- IPC: H01L23/52 ; H01L23/48 ; H01L29/40

Abstract:
A semiconductor package includes a semiconductor structure. The semiconductor structure includes a plurality of dielectric layers and a plurality of conductive interconnects embedded in the semiconductor structure. The semiconductor structure also includes a plurality of proximity communication signal input terminals. At least one of the plurality of proximity communication signal input terminals includes a first electrode and a second electrode. The first electrode and the second electrode are spaced apart so as to be configured to provide proximity communication through capacitive coupling. The first electrode is exposed proximate to a surface of the semiconductor structure.
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Information query
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