Invention Grant
- Patent Title: Semiconductor element comprising a supporting structure and production method
- Patent Title (中): 包括支撑结构和制造方法的半导体元件
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Application No.: US11862211Application Date: 2007-09-27
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Publication No.: US08592987B2Publication Date: 2013-11-26
- Inventor: Hans-Joachim Barth
- Applicant: Hans-Joachim Barth
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Infineon Technologies AG
- Agent Philip H. Schlazer
- Priority: DE102006046182 20060929
- Main IPC: H01L23/48
- IPC: H01L23/48
Abstract:
One or more embodiments are related to a semiconductor component comprising a supporting structure arranged in a first layer sequence, a second layer arranged above the first layer sequence, and a bonding pad. The layer sequence may comprise a plurality of layers of a dielectric and the bonding pad is arranged above the second layer. The supporting structure may comprise a plurality of supporting substructures and is formed under partial regions of the bonding pad.
Public/Granted literature
- US20080079168A1 SEMICONDUCTOR ELEMENT COMPRISING A SUPPORTING STRUCTURE AND PRODUCTION METHOD Public/Granted day:2008-04-03
Information query
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