Invention Grant
- Patent Title: Semiconductor device and method of manufacturing semiconductor device
- Patent Title (中): 半导体装置及其制造方法
-
Application No.: US13193154Application Date: 2011-07-28
-
Publication No.: US08592990B2Publication Date: 2013-11-26
- Inventor: Shinichi Chikaki , Takahiro Nakayama
- Applicant: Shinichi Chikaki , Takahiro Nakayama
- Applicant Address: JP Kanagawa JP Kanagawa
- Assignee: Renesas Electronics Corporation,ULVAC, Inc.
- Current Assignee: Renesas Electronics Corporation,ULVAC, Inc.
- Current Assignee Address: JP Kanagawa JP Kanagawa
- Agency: Sughrue Mion, PLLC
- Priority: JP2010-170099 20100729
- Main IPC: H01L23/52
- IPC: H01L23/52 ; H01L23/48 ; H01L29/40
Abstract:
A semiconductor device includes: a first porous layer that is formed over a substrate and includes a SiO2 skeleton; a second porous layer that is formed immediately above the first porous layer and includes a SiO2 skeleton; a via wiring that is provided in the first porous layer; and a trench wiring that is buried in the second porous layer. The first porous layer has a pore density x1 of 40% or below and the second porous layer has a pore density x2 of (x1+5) % or above.
Public/Granted literature
- US20120025395A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2012-02-02
Information query
IPC分类:
