Invention Grant
- Patent Title: Semiconductor chip and method for fabricating the same
- Patent Title (中): 半导体芯片及其制造方法
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Application No.: US13006104Application Date: 2011-01-13
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Publication No.: US08592999B2Publication Date: 2013-11-26
- Inventor: Mathias Vaupel
- Applicant: Mathias Vaupel
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L23/29
- IPC: H01L23/29
Abstract:
A semiconductor chip includes a first main face and a second main face opposed to the first main face. Side faces connect the first and second main faces. The side faces are at least partially covered with an anti-EBO compound and/or a surface energy reducing compound.
Public/Granted literature
- US20120181710A1 Semiconductor Chip and Method for Fabricating the Same Public/Granted day:2012-07-19
Information query
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