Invention Grant
- Patent Title: Stacked NMOS DC-to-DC power conversion
- Patent Title (中): 堆叠的NMOS直流到直流电源转换
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Application No.: US13476170Application Date: 2012-05-21
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Publication No.: US08593128B2Publication Date: 2013-11-26
- Inventor: Lawrence M. Burns , David Fisher
- Applicant: Lawrence M. Burns , David Fisher
- Applicant Address: US CA Sunnyvale
- Assignee: R2 Semiconductor, Inc.
- Current Assignee: R2 Semiconductor, Inc.
- Current Assignee Address: US CA Sunnyvale
- Agent Brian R. Short
- Main IPC: G05F1/595
- IPC: G05F1/595 ; G05F1/618
Abstract:
Another embodiment includes a voltage regulator. The voltage regulator includes a series switch element connected between a first voltage supply and a common node, the series switch element comprising an NMOS series switching transistor, a shunt switch element connected between the common node and a second voltage supply, the shunt switch element comprising an NMOS shunt switching transistor. The voltage regulator further includes means for closing the series switch element during a first period by applying a switching gate voltage to a gate of the NMOS series switch transistor of the series switch element, wherein the switching gate voltage has a voltage potential of at least a threshold voltage greater than a voltage potential of the common node, means for closing the shunt switch element during a second period, the shunt switch element comprising an NMOS shunt switching transistor.
Public/Granted literature
- US20120229102A1 Stacked NMOS DC-To-DC Power Conversion Public/Granted day:2012-09-13
Information query
IPC分类:
