Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US13195409Application Date: 2011-08-01
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Publication No.: US08593168B2Publication Date: 2013-11-26
- Inventor: Kenichi Kawasaki
- Applicant: Kenichi Kawasaki
- Applicant Address: JP Kawasaki
- Assignee: Fujitsu Limited
- Current Assignee: Fujitsu Limited
- Current Assignee Address: JP Kawasaki
- Agency: Arent Fox LLP
- Priority: JP2007-211842 20070815
- Main IPC: G01R31/06
- IPC: G01R31/06

Abstract:
A first power-cutoff switch is disposed between a power line and an internal power line dedicated for a circuit block, and has a current supply capacity having the level at which ON-current can protect an external examination environment. A second power-cutoff switch is disposed between a power line and an internal power line, and has a current supply capacity having the level at which ON-current can supply consumed current of the circuit block. A detecting circuit detects that a voltage of the internal power line matches a reference voltage. The first power-cutoff switch is ON/OFF by an operation state of the circuit block. The second power-cutoff switch is ON by detecting the matching of the volumes with the detecting circuit and is OFF by the ON/OFF operation of the first power-cutoff switch.
Public/Granted literature
- US20110285418A1 SEMICONDUCTOR DEVICE Public/Granted day:2011-11-24
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