Invention Grant
- Patent Title: Circuit and method for correcting temperature dependence of frequency for piezoresistive oscillators
- Patent Title (中): 用于校正压阻振荡器的频率温度依赖性的电路和方法
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Application No.: US13273704Application Date: 2011-10-14
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Publication No.: US08593230B2Publication Date: 2013-11-26
- Inventor: Kim Le Phan , Jozef Thomas Martinus van Beek
- Applicant: Kim Le Phan , Jozef Thomas Martinus van Beek
- Applicant Address: NL Eindhoven
- Assignee: NXP, B.V.
- Current Assignee: NXP, B.V.
- Current Assignee Address: NL Eindhoven
- Main IPC: H03B5/00
- IPC: H03B5/00

Abstract:
MEMS oscillators, which include a silicon-type, in particular piezoresistive resonators, can be used to provide a fixed, stable output frequency. Silicon has a natural temperature dependence of Young's modulus, therefore, as ambient temperature changes and/or the piezoresistive resonator is powered, the resonator temperature changes, and the resonance frequency of the resonator drifts. In order to account for the temperature drift of the piezoresistive resonator, the piezoresistive resonator itself is used as a temperature sensor. The relative resistance change of the piezoresistive resonator depends only on the relative temperature change and material property of the resonator. Therefore, an accurate temperature can be sensed directly on the piezoresistive resonator. The temperature drift information is provided to a frequency adjuster, which corrects the output frequency of the circuit.
Public/Granted literature
- US20130093525A1 CIRCUIT AND METHOD FOR CORRECTING TEMPERATURE DEPENDENCE OF FREQUENCY FOR PIEZORESISTIVE OSCILLATORS Public/Granted day:2013-04-18
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